The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

Germanium dioxide (GeO₂) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO₂ behaves superior film morphology and enhanced work function. Using GeO₂ as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm² and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO₂ ABL formed from appropriate concentration of GeO₂ aqueous solution favors hole injection enhancement and accordingly promoting device performance.     

Effect of absorbed pump power on the quality of output beam from monolithic microchip lasers

The dependence of the beam propagation factor (M ² parameter) with the absorbed pump power in the case of monolithic microchip laser under face-cooled configuration is extensively studied. Our investigations show that the M ₂ parameter is related to the absorbed pump power through two parameters (α and β) whose values depend on the laser material properties and laser configuration. We have shown that one parameter arises due to the oscillation of higher order modes in the microchip cavity and the other parameter accounts for the spherical aberration associated with the thermal lens induced by the pump beam. Such dependency of M ² parameter with the absorbed pump power is experimentally verified for a face-cooled monolithic microchip laser based on Nd³⁺ -doped GdVO₄ crystal and the values of α and β parameters were estimated from the experimentally measured data points.     

激光二极管反馈干涉的实验观测

利用LabView软件虚拟示波器和信号源,观测了激光二极管反馈干涉实验现象．实验证明反馈回激光二极管的光的入射方向和入射光强以及信号处理电路的带宽,对反馈干涉信号有很大的影响．     

“神龙一号”注入器研制

“神龙一号”注入器是直线感应加速器的束流源，它采用了感应叠加的高压加载方式，包括脉冲功率系统、感应腔、阴阳极杆、绝缘支撑、二极管和束流传输系统等子系统. 在研制中采用了径向绝缘支撑、对中支撑调节系统、类Pierce阴极等先进技术，以及二极管线圈内置和外径为800mm的铁氧体大环等创新. 参数测试显示，3.5MeV注入器达到了世界先进水平.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

半导体激光器发射光谱实验仪

设计了一种半导体激光器发射光谱实验仪 ,可以用来观测LD发射的荧光光谱、激光光谱 ,以及了解光栅外腔选取单纵模、压窄线宽、波长调谐的机理 .该实验仪结构紧凑 ,物理概念清晰 ,适用于大专院校的光学实验教学     

滤片-XRD探测系统响应时间测量

 研究了软X射线能谱仪探测道系统(系统包括X射线二极管（XRD）、SUJ-50-10电缆和不同频带示波器)的响应时间。实验利用上海激光联合实验室的20TW激光器激光(激光能量约20J，脉冲宽度约1ps)打金箔靶产生的X光，用XRD探测系统测量，记录示波器有TK684C，TK694C和WM8500等。将实验数据进行了线性拟合和比对分析。滤片XRD探测系统的响应时间随偏压升高而加快，随传输电缆长度的增加而变慢，因此测量快信号过程时，应提高探测器偏压，缩短传输电缆，选择宽频带高采样率示波器，以便减少系统的响应时间，减小信号失真程度。     

强流四脉冲电子束源实验研究

 为了进行强流多电子束源研究，对现有2MeV LIA 注入器进行了四脉冲改造，二极管脉冲电压约500kV。实验研究了天鹅绒阴极在四脉冲条件下的发射能力、传导电流负载效应以及阴极等离子体运动对阴极电子发射和束能量的影响。利用空间电荷限制流模型推算出阴极等离子体膨胀速率在1 ~4cm/μs之间。     

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.     

Tesla变压器型电子束加速器初步实验

 介绍了一种Tesla变压器型的强流电子束加速器。当变压器初级输入20kV左右的电压时，加速器二极管输出电压500kV，电流9kA，信号脉宽大约50ns，该装置具有结构简单，安装方便，运行可靠等特点。